Irfp260N Mosfet Ic Dip-3 Package

The IRFP260N is a high-performance N-Channel Power MOSFET from Infineon Technologies, designed for efficient power switching applications. It features a low on-resistance of 0.04 Ω at a gate-source voltage (VGS) of 10 V, ensuring minimal conduction losses. The device can handle drain currents up to 50 A and drain-source voltages up to 200 V, making it suitable for high-power applications. Housed in a TO-247 package, it is commonly used in DC-DC converters, motor control circuits, and other power management systems.

Note:

1. Product Images are shown for illustrative purposes only and may differ from the actual product.
2. For Technical Specifications about the IC go through the Datasheet in the Attachment section.
   

Features:

1. Low On-Resistance: Offers a maximum R_DS(on) of 0.04 Ω at V_GS = 10 V, ensuring minimal conduction losses.
2. High Current Handling: Capable of continuous drain currents up to 50 A at 25°C, suitable for high-power applications.
3. Fast Switching Speed: Designed for efficient operation in low-frequency applications, enhancing overall system performance.
4. High Avalanche Energy Rating: Supports single-pulse avalanche energy up to 560 mJ, providing robustness against transient conditions.
5. Wide Operating Temperature Range: Operates effectively between -55°C and 175°C, accommodating various environmental conditions.

Package Includes:

1 x IRFP260N MOSFET IC DIP-3 Package